637nm 1000mw 高功率 红光 半导体激光器
637nm 1000mw High power Red Semiconductor Laser
[Features]
Miniature size
Collimated straight beam
Easy use & maintenance free
Longlife operation
High efficiency
High reliability
[Specifications]
Product Name: 637nm 1000mw Red Semiconductor Laser
Lead Time: 1~3 weeks, Custom product available!
Output Wavelength: 637nm±5nm
Output Power: 1000mW
Spatial mode: TEM00
Residual infrared(1064&808nm): <0.01%
Operating mode: CW or Modulation
Spectral Linewidth: <0.1 nm
Polarization: Linear
Laser Shape: Circular, aspect ratio<1.1:1
Pointing Stability: <0.05 mrad
Beam diameter (1/e2): 2.5 mm
Beam Divergence Angle: 1.2 mrad
Power stability: <±5% per 2 hrs
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Beam quality(M2): <1.2
Optimum Operating Temperature: 20~30℃
Storage Temperature: 10~50℃
MTTF(mean time to failure): 10,000 hrs
Laser dimensions: 100(L)x34(W)x45(H) mm
Warranty: 1 Year
[APPLICATIONS]
Thermal printing
Material Inspection
Scanning Biochemistry
Lidar
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