808nm 100mW~1000mW IR半导体激光器 0~30khz
808nm 100mW~1000mw IR Semiconductor Laser modulation 0~30khz Analog or TTL
[Specifications]
Product Name: 808nm IR Semiconductor Laser
Lead Time: 1~3 weeks, Custom product available!
Output Wavelength: 808(+/-5) nm
Output Power: 100mW / 1000mW (choose)
Spot mode: multimode
Operating mode: CW or Modulation
Prejudiced way: 10:1
Pointing Stability: <0.05 mrad
Beam diameter: 6mm
Beam Divergence Angle: 2.5 mrad
Power stability: <±3% per 2 hrs
Bean Height: 25mm
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Beam quality(M2): <20
Optimum Operating Temperature: 20~30℃
Storage Temperature: 10~50℃
MTTF(mean time to failure): 10,000 hrs
Laser dimensions: 100(L)x40(W)x50(H)mm3
Modulation: 0~30khz Analog or TTL
[Package include]
1 x 808nm IR Laser
1 x Laser power supply
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