808nm 2W~4W 高功率 IR半导体激光器 0~30khz模拟或TTL调制
808nm 2W~4W High power IR Semiconductor Laser 0~30khz Analog or TTL
[Specifications]
Product Name: 808nm 808nm 2W~4W IR Semiconductor Laser
Lead Time: 3~7 workingdays! Custom product available!
Output Wavelength: 808(+/-5) nm
Output Power: 2W~4W (choose)
Spot mode: multimode
Operating mode: CW or Modulation
Prejudiced way: 10:1
Pointing Stability: <0.05 mrad
Beam diameter: 6mm
Beam Divergence Angle: 2.5 mrad
Power stability: <±3% per 2 hrs
Bean Height: 25mm
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Beam quality(M2): <20
Optimum Operating Temperature: 20~30℃
Storage Temperature: 10~50℃
MTTF(mean time to failure): 10,000 hrs
Laser dimensions: 155(L)x77(W)x60(H)mm3
Modulation: 0~30khz Analog or TTL
[Package include]
1 x 808nm IR Laser
1 x Laser power supply
808nm Semiconductor laser 2000mw with power supply Modulation is TTL or Analog