808nm 8W~10W 高功率红外半导体激光器 0〜30kHz模拟或TTL调制

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808nm 8W~10W 高功率红外半导体激光器 0〜30kHz模拟或TTL调制
808nm 8W~10W High power IR Semiconductor Laser 0~30khz Analog or TTL
 
[Specifications]
Product Name: 808nm 8000mW 10000mW   IR Semiconductor Laser
Lead Time: 3~7 workingdays! Custom product available!
Output Wavelength: 808(+/-5) nm
Output Power: 8W/10W (choose)
Speckle Pattern: multimode
Operating mode: CW or Modulation
Prejudiced way: 10:01
Pointing Stability: <0.05 mrad
Beam diameter: 6mm
Beam Divergence Angle:  2.5 mrad
Power stability: <±3% per 2 hrs
Bean Height: 29mm
Temperature Stabilizing: TEC
Warm Up Time: <5 minutes
Beam quality(M2): <20
Optimum Operating Temperature: 20~30℃
Storage Temperature: 10~50℃
MTTF(mean time to failure): 10,000 hrs
Laser dimensions: 155(L)x77(W)x60(H)mm3
Modulation:  0~30khz Analog or TTL
 
[Package include]
1 x 808nm IR  Laser
1 x Laser power supply

 

 
 
 
 






civillaser power supply
 






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